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| TOSHIBA MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs (X, Ku-Band) Features * Low intermodulation distortion - IM3 = -45 dBc at Po = 25 dBm, - Single carrier level * High power - P1dB = 36.5 dBm at 12.7 GHz to 13.2 GHz * High gain - G1dB = 7.5 dB at 12.7 GHz to 13.2 GHz * Broad band internally matched * Hermetically sealed package RF Performance Specifications (Ta = 25 C) Characteristics Output Power at 1dB Compression Point Power Gain at 1dB Compression Point Drain Current Gain Flatness Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel-Temperature Rise Symbol P1dB G1dB IDS1 G add IM3 IDS2 Tch VDSxIDSxRth(c-c) Note 1 A C - - 1.7 - 2.2 70 Condition Unit dBm dB A dB % dBc Min. 35.5 6.5 - - - -42 Typ. 36.5 7.5 1.7 - 24 -45 Max - - 2.2 0.8 - - TIM1213-4L VDS = 9V f = 12.7 ~ 13.2 GHz Note 1: 2 Tone Test (Pout = 25 dBm Single Carrier Level). Electrical Characteristics (Ta = 25 C) Characteristic Trans-conductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance Symbol gm VGSoff IDSS VGSO Rth (c-c) Condition VDS = 3V IDS = 2.0A VDS = 3V IDS = 60mA VDS = 3V VGS = 0V IGS = -60A Channel to case Unit mS V A V C/W Min. - -2 - -5 - Typ. 1200 -3.5 4.0 - 2.9 Max - -5 5.2 - 3.5 The information contained here is subject to change without notice. The information contained herein is presented only as guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. These TOSHIBA products are intended for usage in general electronic equipments (office equipment, communication equipment, measuring equipment, domestic electrification, etc.) Please make sure that you consult with us before you use these TOSHIBA products in equipments which require high quality and/or reliability, and in equipments which could have major impact to the welfare of human life (atomic energy control, spaceship, traffic signal, combustion control, all types of safety devices, etc.). TOSHIBA cannot accept liability to any damage which may occur in case these TOSHIBA products were used in the mentioned equipments without prior consultation with TOSHIBA. TOSHIBA CORPORATION MW50230196 1/4 TIM1213-4L Absolute Maximum Ratings (Ta = 25 C) Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc = 25C) Channel Temperature Storage Temperature Symbol VDS VGS IDS PT Tch Tstg Unit V V A W C C Rating 15 -5 5.2 30 175 -65~175 Package Outline (2-9D1A) Handling Precautions for Packaged Type Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260C. 2/4 MW50230196 TOSHIBA CORPORATION TIM1213-4L RF Performances TOSHIBA CORPORATION MW50230196 3/4 TIM1213-4L Power Dissipation vs. Case Temperature IM3 vs. Output Power Characteristics 4/4 MW50230196 TOSHIBA CORPORATION |
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